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We demonstrate excimer laser annealed dopant segregated Schottky (ELA-DSS) junction on gate-all-around (GAA) silicon nanowire pFETs. The metal-semiconductor junction interfacial doping is increased by two-fold with the ELA method. On silicon nanowire, the method achieves an effective Schottky barrier height (SBH) of nearly zero, improves the short channel performance and reduces the parasitic resistance...
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