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Electrical stress and 10-keV x-ray irradiation and annealing responses are evaluated for HfO2-passivated black phosphorous (BP) MOSFETs with HfO2 gate dielectrics. Device characteristics are stable during constant gate-voltage stress up to at least ±1 V. Significant negative threshold shifts, mobility degradation, and increases in subthreshold swing occur during both positive and negative bias irradiation...
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