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We measured the total ionizing dose response of gate-all-around silicon nanowire n- and pMOSFETs to x-ray doses up to 2Mrad(SiO). We show that they are radiation hard, with no degradation in threshold voltage, off-state current, or subthreshold slope, even at the highest dose for a wide range of bias conditions. We attribute this to the intrinsically rad-hard feature of the gate-all-around device...
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