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The layer-specific atomic structure of the 4H-SiC(0001) surface at each stage of single-layer graphene formation was studied using photoelectron diffraction. The 2π-sr C 1s photoelectron intensity angular distributions (PIADs) excited by circularly-polarized soft X-ray were measured. Taking the photoelectron inelastic mean free path into account, we have separated C 1s PIADs of the graphene overlayer...
Damaged layers and polishing haze exist on substrate surfaces owing to abrasion during figuring processes, which deteriorate surface integrity. We have developed a novel damage-free ultraprecision figuring technique and obtained atomically flat and damage-free SiC(0001) surfaces with a domain size of 300–500nm. Using ultraprecision-figured 0°-off 4H-SiC(0001) surfaces as substrates, we demonstrated...
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