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The interface between III–V and metal‐oxide‐semiconductor materials plays a central role in the operation of high‐speed electronic devices, such as transistors and light‐emitting diodes. The high‐speed property gives the light‐emitting diodes a high response speed and low dark current, and they are widely used in communications, infrared remote sensing, optical detection, and other fields. The rational...
The defect‐driven interfacial electron structure of the Ti/ZrO2/Al2O3/InGaAs system is probed and manipulated by Xing Wu, Litao Sun, Kinleong Pey, and co‐workers in article number 1703025 using a specifically designed in situ transmission electron microscopy experimental method. Interfacial defects induced by missing oxygen atoms are found to be the main reason for the device failure. This paves the...
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