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In this paper, we proposed our recent works on inductively coupled plasma (ICP) etching of GaAs in Cl2/Ar and Cl2/Ar/O2 chemistry for pattern structure transferring and analyzed their etching mechanism. It is proposed that the etching rate reduction due to introduction of extra Cl2 and additional O2 in the plasma chemistry is resulted from their influences on all ICP etching process aspects. Moreover,...
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