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A physics-based compact model is developed to capture the essential resistive switching behaviors of conductive-bridge random access memory (CBRAM) under DC and AC operations. Three types of evolution modes of conductive filament correlated with material properties and operation schemes are modeled based on experimental observations. By modeling the temperature and electric-field effects as well as...
High mobility III-V compounds is a strong contender for extending high performance logic beyond the 22 nm technology node. However, demonstrations of exceptional III-V performance required device footprints on the mum-scale despite nm-scale gate lengths, in order to avoid source/drain shorting during contact alloying. The scaling of III-V FETs is severely limited by the unacceptably large lateral...
With the deformation theory of continuum mechanics, we extend the coordinate transformation method to design arbitrary transformation metamaterials, which are inherently transparent for electromagnetic waves. In the experiment, the metamaterial capable of bending waves is verified. The transparency phenomenon based on the field cancellation effect is also discussed. The composites fabricated with...
In summary, we successfully demonstrate the unpinning of the Fermi level in n-GaAs through the insertion of an ultrathin insulator to reduce the penetration of MIGS from the metal into the semiconductor. We are able to transform the current from rectifying Schottky behavior, to increased conduction, to tunneling limited, simply by increasing the SiN thickness, verifying the ability for SiN to modulate...
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