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Stability is a critical design issue for radiation detection readout circuit when high counting rate together with low power property is simultaneously required. In this letter a novel method which increases the phase margin of the pulse shaper is presented. A readout circuit using this compensation technique has been implemented in 0.35 μ CMOS technology. Simulation and test results show that this...
Spin-torque transfer magnetic RAM (STT MRAM) is a promising candidate for future embedded applications. It provides desirable memory attributes such as fast access time, low cost, high density and non-volatility. However, variations in process parameters can lead to a large number of cells to fail, severely affecting the yield of the memory array. In this paper, we provide a thorough analysis of the...
Spin-Torque Transfer Magnetic RAM (STT MRAM) has emerged as a promising candidate for future universal memory. It not only combines the desirable attributes of all current memory technologies (SRAM, DRAM and flash memories) but also solves the critical drawbacks of conventional MRAM technology: poor scalability and high write current. However, variations in process parameters can lead to large number...
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