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A novel deep trench SOI LIGBT with enhanced safe operating area has been proposed. Deep trench gate electrode, reaching buried oxide layer, has been directly introduced for achieving low on-resistance. Heavily doped p+ region at the emitter side, which sandwiches between the n-drift region and n+ emitter region, is provided as holes bypassing path for ensuring enhanced forward biased safe operating...
A new super junction LDMOS (SJ-LDMOS) on partial silicon-on-insulator (SOI) with composite substrate is presented in this paper. The thin super junction structure on the buried oxide (BOX) provides the surface low on-resistance path, which is attributed to the heavy doping trait of SJ. The N-buffer layer is introduced under the BOX to sustain vertical voltage, which reduces the substrate-assisted...
The systematic failure theory of the power electronic devices has always been absent, and the device characteristic of internal dynamics is often been neglected. For the better explanation of nonlinear phenomena in power electronic devices, this paper researched the typical device of thyristor in detail. In the first instance, whether frequency change or gate current change, the simulation and experimental...
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