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Epitaxial growth of A–A and A–B stacking MoS2 on WS2 via a two‐step chemical vapor deposition method is reported. These epitaxial heterostructures show an atomic clean interface and a strong interlayer coupling, as evidenced by systematic characterization. Low‐frequency Raman breathing and shear modes are observed in commensurate stacking bilayers for the first time; these can serve as persuasive...
Ultrastrong and precisely controllable n‐type photoinduced doping at a graphene/TiOx heterostructure as a result of trap‐state‐mediated charge transfer is demonstrated, which is much higher than any other reported photodoping techniques. Based on the strong light–matter interactions at the graphene/TiOx heterostructure, precisely controlled photoinduced bandgap opening of a bilayer graphene device...
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