The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We proposed a dipole antenna integrated on a thick resin layer on the opposite side of a RF circuit layer though a hole in a silicon CMOS chip at 60 GHz. The thick resin layer can enhance the radiation efficiency. The connection loss between the antenna and the RF circuit is expected to be small. In this paper, we modify the opening of the holes by drilling to achieve smoother walls and reduce the...
In this paper, a new structure of silicon tactile imager with SU-8 protective layer is presented. The protective layer is formed on the surface of integrated piezoresistor array to prevent direct contact of the sensor surface to the object. The protective layer is formed individually on each pixel circuit to prevent degradation of the spatial resolution. This tactile imager is fabricated by an established...
This paper presents a 20-GHz pseudo-differential power amplifier (PA) fabricated in a standard 90-nm Si-CMOS process. The pseudo-differential PA has a two-stage cascode configuration with differential input and output ports. Assuming the use of an off-chip transformer, the input impedance of each single PA is designed to be 6.25 Omega and the output impedance to be 25 Omega. The individual amplifier...
A 25-GHz, 40-mW power amplifier with SO-Omega input and output matching circuit in standard 90-nm Si-CMOS technology is reported. The supply voltage of 3.3 V is compatible with that of conventional wireless communication systems. To enable this, a stacked cascode configuration with a Vdd = 1.2 V transistor and a Vdd = 3.3 V thick oxide transistor for digital I/O interfaces is used. The power amplifier...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.