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FinFETs are new structures for scaling the devices at sub-nanometer regime to continue the Moore's law. To increase the performance of FinFETs, a dual metal gate with underlap concepts has been introduced. Moreover, its performance can be enhanced by spacers. The dual metal gate comprises of two different workfunction materials (Molybdenum and Tungsten) for double gate (DG) and triple gate (TG) FinFET...
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