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The self-assembled growth of submonolayer Ge on the Si(111)-(7x7) surface grown by solid phase epitaxy has been studied using scanning tunneling microscopy. Ordered Ge nanoclusters on the surface are formed by the deposition of the submonolayer of Ge at room temperature and subsequent annealing. It is proposed that adsorbate Ge atoms are trapped in the attractive potential wells on the faulted half...
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