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The inelastic scattering of O 1s photoelectrons in ultra-thin silicon oxides thermally grown on Si(111) surface in 1 Torr dry oxygen at 600–880 °C was studied. The following results were obtained: (1) the energy loss of O 1s photoelectrons arising from band gap ionization in SiO 2 can be observed for oxide films with thickness larger than about 1 nm, (2) the energy loss in the energy range...
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