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The transport properties at the Si-Al 2 O 3 interface are probed directly on virgin silicon-on-sapphire (SOS) wafers. The measurement consists of the activation of the pseudo-MOS transistor, once the sapphire substrate has been aggressively thinned down to 30 μm. Typical transistor characteristics are measured and used to uncover the parameters that reflect the quality of SOS wafers:...
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