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This paper presents an inductorless SiGe HBT low noise amplifier (LNA) using JAZZ 0.35 ??m SiGe BiCMOS technology. The LNA is designed with multiple resistive feedback structure. In addition, peaking capacitors at both emitters were adopted to compensate for the gain rolloff at higher frequency. The results of simulation show that the LNA has over 22.3 dB gain with less than 1 dB variation, noise...
This paper presents a SiGe HBT low noise amplifier (LNA) using resistive feedback scheme for ultra-wideband (UWB) applications. This amplifier is implemented in 0.35 um SiGe process and is unconditionally stable. The simulated results show the LNA has over 21 dB gain with less than 1 dB variation over 3-10 GHz. The matched input and output reflection are all less than -10 dB. The noise figure is 4...
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