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A novel multi-finger power SiGe heterojunction bipolar transistor (HBT) with non-uniform finger length and non-uniform finger spacing was proposed to improve the thermal stability. Thermal simulation for a ten-finger power SiGe HBT with novel structure was conducted with ANSYS software. Three-dimensional temperature distribution on emitter fingers was obtained. Compared with traditional structure...
A novel multi-finger power SiGe heterojunction bipolar transistor (HBT) with segmented emitter fingers and nonuniform segment spacing was proposed to improve the thermal stability. Thermal simulation for a ten-finger power SiGe HBT with novel structure was conducted with ANSYS software. Three-dimensional temperature distribution on emitter fingers was obtained. Compared with traditional emitter structure,...
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