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ZnO nanowire photoanodes were prepared by a simple chemical bath method. The influence of doping Al into ZnO seed layer, dipping times of seed layers and the growth times of ZnO nanowires on the morphology of ZnO nanowires and photoelectric performance of dye-sensitized solar cells were mainly investigated. The results showed that when the ZnO seed layer was doped with 9 at.% Al, both dipping times...
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