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In this paper, a broadband fourth-harmonic mixer based on gallium arsenide (GaAs) Schottky barrier diodes working at 80–100GHz is designed. This fourth-harmonic mixer is simulated and attains low conversion loss below 14dB in the whole band. The design process and simulation results are explained in detail.
In this paper, a 620–690GHz sub-harmonic mixer using monolithic GaAs integrated schottky diodes is presented in order to remove the mismatch caused by manual assembly of the flip chip diode. The monolithic microwave integrated circuit integrates a Schottky anti-parallel diodes pair in a longitudinal configuration. We mostly analyzed the influence caused by diode position offset and conductive adhesive...
This paper describes the planar schottky diode based subharmonic mixers currently being developed at the EHF Key Laboratory of Fundamental Science of Universtity of Electronic Science and Technology of China. Hybrid and integrated GaAs Schottky diode based 330GHz and 420GHz subharmonic mixers are designed, fabricated and measured. Test results show that the minimum conversion loss of 330GHz monolithic...
This letter presents the design of a wide band 8th harmonic mixer, using an anti-parallel pair of planar Schottky GaAs flipp-chip diodes fabricated onto a suspended quartz-based microstrip circuit. Simulations predict conversion losses are well below 23dB from 330 to 500GHz. The design offers an solution to simplify the local oscillator signal generation and realize the goal of low frequency conversion...
In this paper, we use suspended microstrip to design a 0.33 THz fequency tripler, in which a pair of Schottky varactor chips parallel is adopted. Considering the present processing technology, it's easy for the unbalanced structure to provide bias to the diodes without an on-chip capacitor, which is essential to the balanced tripler scheme. The tripler consists of a waveguide housing, a pair of quartz...
This paper presents the design and simulation investigation of a 850GHz low-loss subharmonical mixer based on GaAs Schottky barrier diodes. Our group analyzed the topology of subharmonic mixer, device modeling of Schottky diodes, the 3D electromagnetic passive circuits and the mixer circuitry with optimum performance. The antiparallel diodes pair is fabricated from China Electronics Technology Group...
In this paper, a 420GHz GaAs monolithic integrated sub-harmonic mixer based on planar Schottky diode is presented. We combine the diode 3D model, nonlinear model and passive circuit by field-circuit method, then optimize the circuit through harmonic balanced method, finally study the GaAs monolithic integrated 420GHz sub-harmonic mixer. Simulated results for the mixer achieved DSB conversion loss...
The design of a low-cost microstrip based sub-harmonic mixer (SHM) is presented, which is feasible to be integrated with other circuit stages on the same substrate because of its good S11s. Taking the often neglected S11s as one of the goals for the mixer, this paper utilizes a 3D diode model and quasi-linear parameters to model the schottky barrier diode in the full-wave EM simulator HFSS, which...
Terahertz electromagnetic radiation (from 0.1THz to 10THz) that lies in the boundary region between light and radio waves has attracted much attention in recent years due to its certain extraordinary properties. This paper presents the design and simulation investigation of a 0.66THz low-loss subharmonical mixer based on GaAs Schottky barrier diodes. The antiparallel diodes pair is fabricated from...
In this paper, a terahertz wideband sub-harmonic mixer based on the Schottky anti-parallel diodes pair and MASTER technology is presented. The mixer circuit is fabricated on a 0.05mm quartz substrate including Schottky anti-parallel diodes pair, RF/LO transition, IF matching networks and filtering circuits. The diode circuit is fabricated on a quartz substrate directly by MASTER technology. The research...
In this paper, a substrate integrated spiral resonator based on strongly coupled magnetic resonances, suitable for wireless power transfer (WPT) applications is presented. Compactness that driving loop and source coil are integrated in one substrate, ease of manufacture and application is achieved with high transferring efficiency and large distance. Without load coil, the source coil does not transfer...
This paper presents two simple SPICE circuit models of the memristor using two different kinds of integrators. These models expand and simplify the previous methods of solving the memristor's modeling equations presented by Hewlett–Packard Lab. The behaviors of the two memristor models are investigated when they are excited by a sinusoidal voltage source. Both models satisfy the general features of...
This paper presents a new improved compact, low-insertion loss, sharp-rejection, and easy to manufacture compact microstrip resonant cell (CMRC) structure [1] as microstrip or suspended-substrate microstrip lowpass filter (LPF) used in terahertz (THz) Subharmonically pumped mixer (SHM). In comparison to traditional high/low step-impedance filter used in SHM, this improved CMRC structure could shorten...
The paper presents the design and fabrication of a low-loss fixed-tuned 118 GHz subharmonically pumped mixer, using commercially available GaAs Schottky barrier diodes flip-chipped onto a suspended microstrip circuit. The simulation performance of the mixer exhibits a double side band (DSB) conversion loss below 10 dB over the range of 113-123-GHz, with 6 mW of local oscillator (LO) power. At 118...
This paper presents the design and simulation of a novel fixed-tuned 310-350-GHz wide-band sub-harmonic mixer. The mixer is based on an anti-parallel pair of GaAs Schottky diodes fabricated at European company. The circuits are fully integrated with the RF/IF filter and flip-chipped onto a suspended quartz-based substrate. A best double-sideband-mixer loss of 5.7 dB was achieved with 5 mW of LO power...
This paper presents the optimization and design of a low-loss fixed-tuned 215-235-GHz sub-harmonic mixer, pumped by planar GaAs Schottky diodes fabricated by European company for space-borne radiometers. The circuits are fully integrated with the RF/IF filter and flip-chipped onto a suspended quartz-based substrate. The GaAs Gunn oscillator is used as the local-oscillator (LO) and this paper also...
An equivalent circuit model of improved electric resonant structure loaded by lumped components is presented in this paper. The relative resonant characteristics are detailed analyzed and the main factors effected on the bandwidth of transition from zero to pole transmission points are retrieved. An commercial simulation software of Ansoft HFSS is used to validate our theoretical analysis. Then, a...
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