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This paper presents an overview of three works about graphene-based resistive random access memory (RRAM). The fabrication, device performance and working mechanism of graphene-inserted electrode RRAM, RRAM based on laser-scribed reduced graphene and gate-controlled graphene-electrode RRAM are introduced. This work may inspire new design of high-performance RRAM based on two-dimensional material and...
A field effect cuprous oxide solar cell device based on a gate that controls carrier concentration in semiconductors and using screening-engineered nanostructured electrodes is presented. The cell works in inversion mode, with a top gate that forms a depletion layer and a p-n junction, and with nanostructured electrodes that collect the photocurrent across the junction. This device does not require...
High-density piezoelectric micromachined ultrasonic transducer (pMUT) arrays have been designed and fabricated using silicon based micromachined process. These devices are based on a novel structure called “reverse-bonding”. Experimental results show that they have excellent performance, suitable resonance frequency and high reliability. The fabricated pMUT arrays are very promising for 3-D medical...
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