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Extreme ultraviolet (EUV) radiation with wavelengths of 11-14 nm is seen as the most promising candidate for a new lithographic technology. Compared with synchrotron radiation sources and laser-produced plasmas, gas discharge-produced plasma sources for EUV radiation are expected to offer lower cost of ownership. Using xenon, a broadband emission in the investigated wavelength range from 10 to 17...
Development of the high power EUV (extreme ultraviolet) source has been expected as a light source for the next generation lithography. There are two kinds of EUV sources: the discharge produced plasma (DPP) and the laser produced plasma (LPP). The DPP method is considered to be promising in easiness of radiating the high power EUV and in the cheapness of constructing the EUV source. The Z- pinch...
This paper describes the characterization of Z-pinch xenon plasmas for EUV sources. The plasmas were driven by a 15 J pulsed power generator, which delivers pulsed currents (35 kA, 120 ns) to the short circuit load. We have developed a time-resolved interferogram and a Thomson scattering system to characterize the Z-pinch plasmas. The interferogram using a pulsed Nd:YAG laser (532 nm, 7 ns) shows...
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