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The research of a two stage ultra-broadband power amplifier based on GaN HEMT which operates in the frequency ranging from 3 to 8 GHz, is presented in this paper. The power devices TGF2023-2-02 and TGF2023-2-10 based on 0.25um GaN technology are respectively adopted in driver stage and power stage. A frequency compensation and multi-side impedance matching approach are employed in such a way that...
The design, fabrication and measurements of an ultra-broadband power amplifier based on GaN HEMT technology which operates in the frequency ranging from 3 GHz to 8 GHz, is presented in this paper. A TGF2023-2-02 GaN HEMT chip from TriQuint is adopted. The amplifier is designed by using a frequency compensation and multi impedance broadband matching approach for both input and output networks. And...
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