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SrZrO 3 thin films were prepared by sol-gel to explore the possibility of SrZrO 3 to be used as a gate material for MOSFET application. Films were spin-coated layer by layer on Pt/TiO 2 /SiO 2 /Si and silicon substrates and then annealed by rapid thermal annealing at different temperatures ranging form 500 to 900 o C. The energy gap calculated form optical transmittance...
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