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The influences of two different underlying layers of GaN on the growth of InGaN quantum dots self‐assembled by metal organic vapor phase epitaxy are studied. One is a 2 μm high‐temperature grown GaN/sapphire template, and the other includes a 15 nm GaN layer on the template which possesses the same growth temperature with InGaN. The results show the latter can reduce the dot diameter greatly, and...
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