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The carrier lifetimes depending on emission photo energy of InGaN multi‐quantum well (MQW) with different barriers are studied by time‐resolved photoluminescence (TRPL). A two‐exponential decay process is observed for the high‐energy photons. This is explained by there being two types of carrier localization centers (LCs), shallow localization centers (SLCs), and deep localization centers (DLCs),...
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