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With the development of intelligent broadband optical networks, tunable semiconductor lasers are becoming more and more important for wavelength routing and signal processing. A simple and compact widely tunable laser has recently been developed using half-wave coupled V-cavity. The size of the chip is only about 500 µm×300 µm, and the fabrication process is similar to a simple Fabry-Perot laser....
A bandgap blue shift of 142nm with enhanced photoluminescence (PL), is demonstrated experimentally. in an InGaAsP/InP quantum well (QW) structure using KrF excimer laser induced quantum well intermixing (QWI) technique. The simple process only involves irradiation of UV pulses from a KrF excimer laser, followed by rapid thermal annealing (RTA) at 750 °C for 2 minutes. The absorption constant at the...
A blue shift of the bandgap 90nm, in an InGaAsP/InP quantum well (QW) structure using argon plasma enhanced quantum well intermixing (QWI) technique is presented. The loss coefficient at the original band-edge was reduced from 373dB/cm to 68dB/cm, which is acceptable and utilizable for photonic integrated circuit application.
For low power low voltage, low area applications, voltage references based on MOS transistors operating in subthreshold offer some attractive advantages over conventional bandgap-based structures. The lack of closed-form explicit expressions for the relationship between output and temperature for most subthreshold-based references makes it difficult to optimize performance and make quantitative comparisons...
Experimental results on a new method of plasma enhanced quantum well intermixing is presented. Using nitrogen plasma treatment followed by rapid thermal annealing, a 100nm-blueshift of photoluminescence peak is obtained. The new method has much weaker side-effect of etching than previously reported method using Argon plasma.
Until recently a closed-form expression for the output voltage of the most basic bandgap references was not available making it difficult to analytically and systematically determine the effects of the temperature dependence of non-ideal components on the magnitude of the output voltage, on the inflection point location, and on the curvature of these bandgap circuits. In this paper several non-ideal...
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