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With the development of intelligent broadband optical networks, tunable semiconductor lasers are becoming more and more important for wavelength routing and signal processing. A simple and compact widely tunable laser has recently been developed using half-wave coupled V-cavity. The size of the chip is only about 500 µm×300 µm, and the fabrication process is similar to a simple Fabry-Perot laser....
A bandgap blue shift of 142nm with enhanced photoluminescence (PL), is demonstrated experimentally. in an InGaAsP/InP quantum well (QW) structure using KrF excimer laser induced quantum well intermixing (QWI) technique. The simple process only involves irradiation of UV pulses from a KrF excimer laser, followed by rapid thermal annealing (RTA) at 750 °C for 2 minutes. The absorption constant at the...
A blue shift of the bandgap 90nm, in an InGaAsP/InP quantum well (QW) structure using argon plasma enhanced quantum well intermixing (QWI) technique is presented. The loss coefficient at the original band-edge was reduced from 373dB/cm to 68dB/cm, which is acceptable and utilizable for photonic integrated circuit application.
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