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This paper reports an optimized design of internal matching circuit for RF LDMOS power transistors. Efforts are mainly focused on the implementation of output internal matching circuit design, where a Shunt-L network structure is adopted. Computer-aided design (CAD) tools are employed to help rearrange the layout of bonding wire arrays to achieve a more uniform current distribution. Consequently,...
A new method for extraction extrinsic component parameters of high power RF LDMOS transistor is present in this paper. This method regards the manifolds as a part of extrinsic capacitances, and uses Nano-fabrication instrument to segment the capacitances with the other parameters. It not only simplifies the procedure for extraction, but also keeps the accuracy for extracting the values of parameters...
In this paper, we present an optimized RF LDMOS transistor structure based on modified CMOS technology. The drift region is improved to reduce the change rate of the output capacitor of the transistor and ameliorate the linearity of power amplifier. Hot Carrier Injection (HCI) is alleviated by reducing the electric field at the gate edge near the drain by optimizing the field plate and the doping...
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