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Uniformities of carbon nanotube diameters and nanoarray pitch values of all the transistors across a chip are required to enable low cost very large scale integration (VLSI) with the carbon nanotube technology. Nanotube diameter and nanoarray pitch are concurrently optimized and unified in this paper with two different substrate bias voltages considering a wide range of p-channel transistor sizes...
Uniform nanotube diameter and nanoarray pitch are essential for low-cost and high-yield manufacturability of billions of carbon nanotube MOSFETs (CN-MOSFETs) with various sizes on a single chip. In this paper, the optimum uniform diameter and pitch of 16nm n-type CN-MOSFETs are determined with two different substrate bias voltages for a wide range of transistor sizes. A new quality metric is evaluated...
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