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We report a detailed characterization of an industry-like prepared Cu(In, Ga)Se2 (CIGS)/CdS heterojunction by scanning transmission electron microscopy and photoluminescence (PL). Energy dispersive X-ray spectroscopy shows the presence of several regions in the CIGS layer that are Cu deprived and Cd enriched, suggesting the segregation of Cd–Se. Concurrently, the CdS layer shows Cd-deprived regions...
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