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We have deposited titanium dioxide (TiO 2 ) thin films on Si(100) and Si(111) substrates in the temperature range of 500-750 o C and in the pressure range of 3.0x10 -7 -5.0x10 -5 Torr using a single molecular precursor such as titanium (IV) iso-propoxide (Ti[OCH(CH 3 ) 2 ] 4 , 97%) by high-vacuum metal-organic chemical vapor deposition...
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