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The highly oriented diamond film was deposited on Si(001) substrate using the bias enhanced nucleation (BEN) proceeded at -250 V for 10 min in 3%CH 4 /H 2 plasma at substrate temperature 750°C. The {111} X-ray pole figure of the oriented diamond film with a thickness of ca 5 μm is clearly dominated by the four {111} peaks of diamond. The full width at half maximum of the peaks in azimuth...
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