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The pn diodes were fabricated by implanting B ions into n-type Si substrate and followed by annealing at 950°C for 20min. Carrier concentrations of the pn diodes were measured by spreading resistance profile (SRP). The room-temperature photoluminescence (PL) and the microstructures of the defects resulted from the ion-implantation of the pn diodes were investigated. Electron-beam-induced current (EBIC)...
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