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A design method for microwave GaN high‐electron mobility transistor (HEMT) power amplifier based on equivalent circuit parameters multi‐bias statistical models is presented. The statistical modeling method includes principal component analysis, factor analysis, and multiple regressions modeling techniques. The statistical model is validated by comparing original and Monte Carlo‐simulated means, standard...
A novel GaN high‐electron mobility transistor (HEMT) nonlinear large‐signal statistical model based on empirical equivalent circuit is proposed in this paper. Thirty‐four GaN HEMTs from 10 batches are measured, and all the parameters of the large‐signal model are extracted by in‐house parameter extraction program. We choose six most sensitive parameters of the drain‐source current model and the gate...
A novel nonlinear large-signal equivalent circuit statistical model of GaN HEMTs based on response surface methodology (RSM) is proposed in this letter. Thirty-four GaN HEMTs from 10 batches are measured and all the parameters in the large-signal equivalent circuit model are extracted by an in-house parameters extraction program. We choose the four most sensitive parameters of the drain-source current...
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