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For the first time, Tb3+ and Eu3+ co‐doped AlN films were prepared using ion implantation, and the crystal structure and cathodoluminescence (CL) properties of films were investigated. Raman scattering and X‐Ray diffraction (XRD) show that high‐dose Tb3+ implantation leads to an increase in internal compressive stress. The non‐radiative resonant energy transfer was suggested between the Tb3+ and defects...
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