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Local control of dopant profiles and ordered doping in high Tc superconductors have the potential to greatly increase the transition temperature, Tc. We report on experiments where we used focused electron beams to locally modulate the oxygen dopant concentration in commercial YBCO films (100nm on LaAlO3). Patterned exposure of YBCO samples to 10 keV electrons and fluences in the 1020 e-/cm2 range...
The third-order intercept point (IP3) of an InGaAs/InP partially-depleted-absorber photodiode is characterized. The IP3 has a flat frequency response: a record IP3 of 39 dBm is achieved at 20 GHz.
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