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MOCVD growth and characterization of GaSb-rich and InAs-rich GaInAsSb on GaSb substrates was investigated. The surface of InAs-rich GaInAsSb epilayers showed morphological features very different from those on GaSb-rich films. Solid compositions of Ga1-xInxAsySb1-y films were dependent on growth temperature and the input source ratios, such as Ga/III ratio and Sb/V ratio. Unintentionally doped InAs-rich...
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