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A full band Monte Carlo simulation based on ab initio calculations is presented to investigate high-field carrier transport characteristics. The band structure and the impact ionization rate of wide bandgap semiconductors are calculated based on a quasiparticle selfconsistent GW method. Then, we demonstrate the full band Monte Carlo simulation in diamond to investigate the electron and hole ionization...
It is a common view that ballistic transport is enhanced due to channel length scaling because of decreased scattering number. In this study, based on Monte Carlo (MC) simulation technique, we have successfully extracted quasi-ballistic transport parameters such as backscattering coefficient, by carefully monitoring particle trajectories around the potential bottleneck point. We have found that contrary...
Quantum-transport simulations of current-voltage characteristics are performed in nanoscale metal-oxide-semiconductor field-effect-transistors. Effects of interface roughness, discrete impurity, and phonon scattering are studied. Band-structure effects in p-type nanowire transistors are also investigated.
We construct a low-dimensional representation of a tight-binding model to be used in the self-consistent device simulation. The method combines the original atomic orbitals of the nanowire device into a small basis set which reproduces the band structure and all the relevant electronic states. The basis representation greatly reduces the numerical burden and makes it possible to incorporate non-elastic...
Impacts of modulated acoustic phonons on electron transport in a free-standing cylindrical semiconductor nanowire are theoretically studied. We formulate the electron scattering rate and mobility limited by the intra-valley acoustic phonon scattering mechanism, using bulk and modulated acoustic phonons in a [001]-directed Si nanowire. The scattering rate calculated using modulated acoustic phonons...
Current-voltage characteristics of ultrathin-body double-gate MOSFETs are calculated within non-equilibrium Greenpsilas function formalism including g-type, f-type, and acoustic phonon scattering. By comparing results under asymmetric and symmetric bias conditions, wavefunction modulation effects on transport characteristics are investigated. On-current reduction ratio under symmetric bias condition...
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