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Two numerical simulation techniques are presented to investigate the heating issues in nanoscale Si devices. The first one is the Monte Carlo simulation for both electron and phonon transport, and the transient electrothermal analysis is carrier out in n+-n-n+ device with the n-layer length of 10 nm. The second is the molecular dynamics approach for simulating the atomic thermal vibration in the nanoscale...
Current-voltage characteristics of ultrathin-body double-gate MOSFETs are calculated within non-equilibrium Greenpsilas function formalism including g-type, f-type, and acoustic phonon scattering. By comparing results under asymmetric and symmetric bias conditions, wavefunction modulation effects on transport characteristics are investigated. On-current reduction ratio under symmetric bias condition...
Reduction of acoustic phonons in a silicon nanowire (SiNW) MOSFET is analyzed in detail, and their impact on electron transport is examined theoretically. The form factor with confined phonons was found to be larger than that with bulk-like phonons. This increase would make electron mobility with confined phonons smaller than that with bulk-like phonons.
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