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Doping enables the effective tuning of the properties of semiconductor nanocrystals (NCs). In this paper, germanium (Ge) NCs are doped with boron (B) in nonthermal plasma. It is shown that B atoms prefer residing at/near the NC surface, rather than in the NC core. The surface state of Ge NCs is modified by the B doping. The oxidation of B-doped Ge NCs is not as serious as that of undoped Ge NCs. Devices...
Cr-Si metastable alloys were prepared by RF sputtering in a low-pressure argon gas. The structure of sputtered alloys results in Cr (Si) solid solution, Cr+Cr 3 Si, the amorphous phase with increasing Si content for Cr-Si alloys. The dissolution hardening effect of Si increases the microhardness of Cr(Si) solid solution. The microhardness of Cr-Si sputtered alloys yields the peak around 50at%...
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