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We introduced the novel porous low-k material with k~2.3 improved the physical properties for intermetal dielectric application in high speed memory device. Because this low-k material has both Si-H and Si-CH 3 bonds in its SiO2 film, it reduced the bowing and adhesion failure of P-HSQ and P-MSQ at via profile and metal wire. As this material was applied at device, the parasitic capacitance between...
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