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This paper presents a 77GHz, 16dBm, 13% PAE power amplifier. It is simulated in a 0.13um silicon-germanium technology with fT of 200GHz. The design technique is not the same as those which are used in traditional power amplifiers. All the matching structures are composed of short or open stubs and MIM capacitors. To get a higher output saturation power, breakdown voltage is also considered in bias...
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