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A 30kVA SiC MOSFET inverter is designed and evaluated for 180°C ambient temperature operation. The entire inverter system is designed for high temperature (HT) except the DSP control circuit in room temperature environment. The power structure is designed using SiC MOSFETs and HT capacitors. The gate driver circuits with protections are also designed for the HT environment. The prototype has been...
With the development of SiC technology, current rating of the latest SiC MOSFET module goes up to 300A and the gate charge becomes higher than 1000nC, which demands a high gating current to drive the power module. To explore the high current and high temperature (HT) potentials of the SiC MOSFET module, a gate driver circuit with high output current and HT capability is developed. In this paper, particular...
SiC devices have a great potential to work in high temperature (HT) environment. To protect SiC MOSFET in HT environment, this paper presents a de-saturation protection and under voltage lock out circuit using commercially available discrete transistors rated at 200°C. A discussion on integrated circuit (IC) solution and discrete circuit solution is presented to evaluate feasibility and benefit to...
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