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In this work, we present simulation and experimental studies of staggered InGaN QWs LEDs emitting at 480nm and 525-nm spectral regimes. The staggered InGaN QW design can be realized by employing combination of high In-content and low In-content InGaN layers to form the QW with significantly improved electron-hole wave function overlap. This leads to the enhancement in radiative efficiency of nitride...
The use of 3-layer staggered InGaN quantum wells light-emitting diodes at 520-525 nm, grown by metal-organic chemical vapor deposition with graded-temperature profile, resulted in increase in efficiency and output power by 2-times.
Novel InGaN-based active regions with improved momentum matrix element were investigated for achieving improved gain and radiative recombination rate. Staggered InGaN quantum wells (QWs) and type-II InGaN-GaNAs QWs demonstrated improvement in radiative recombination rate and optical gain for green spectral regime, and these active regions have the potential to be implemented for high-efficiency green...
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