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The paper presents an over-current protection circuit designed for high voltage power switches. The proposed protection mechanism employs a current limiter to monitor the current flowing through the power switch. The current limiter protects the power switch from potential damage by automatically switching off the device once the current exceeds the preset rating value. Simulated results exhibit that...
In this paper, we demonstrate TaN/fluorinated HfO2 CMOS devices, focusing on symmetry and asymmetry fluorine incorporation at top or bottom HfO2 interfaces. 16% permittivity enhancement, 65% and 91% mobility increases for electron and hole, respectively, under high electric field was achieved. Reliability of n- and p-MOSFET was improved 3 orders and 8% for GIDL and hot carrier immunity, respectively...
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