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Herein, field‐effect transistors (FET) based on multilayer molybdenum disulfide (MoS2) nanoflakes are fabricated by employing poly(4‐vinylpyridine) (PVP) as the modified layer of typical inorganic dielectric (SiO2). The MoS2 nanoflakes are directly exfoliated from bulk MoS2 and transferred onto the PVP surface instead of bare SiO2 substrate that renders the enlarged nanoflake size. Taking advantage...
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