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Hybrid nanostructures of type-I InAs quantum dots (QDs) and type-II GaSb quantum rings (QRs) separated by a GaAs spacer layer is experimentally demonstrated in this paper. As the thickness of GaAs spacer layer decreases, the dot density increases with the reduced dot height, indicating that the smaller InAs QDs tend to grow atop and along the rims of GaSb QRs. With a thin GaAs spacer of 2 nm, the...
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