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There has been a growing interest in electronic and optoelectronic devices based on heterostructures between atomically thin 2D and 3D semiconductor materials. This paper proposes a 2D molybdenum disulfide (MoS2)/3D germanium (Ge) junction field‐effect transistor (JFET). Typical electrical characteristics of the JFET are observed, with a low subthreshold swing of ≈88 mV/dec and a high on/off ratio...
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