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Metasurfaces, also known as metafilms, have recently been developed by researchers for various applications that exploit their exotic electromagnetic characteristics which cannot be found in nature. These applications include compact filter designs, electromagnetic cloaking and illusion coatings, miniaturized waveguides, and many new types of antennas with enhanced functionalities. Specifically, metasurfaces...
In this paper a novel two-layered metasurface (MS) based antenna is proposed and simulated results are presented. Using the proposed MS as an artificial ground plane for a monopole antenna, the integrated antenna realizes both size miniaturization and dual-band functionality. The footprint of the proposed integrated antenna is only 0. 06λq with two operation bands around 4.1 and 5.1 GHz.
A dual-band short backfire antenna with high aperture efficiency for satellite communications is presented. The high aperture efficiency is enabled by loading anisotropic impedance metasurfaces (AIMs) to the cavity walls of a hexagonal short backfire antenna fed by a slot-loaded suspended patch. By optimizing the surface impedance values of the AIM loadings, the achieved aperture efficiency averaged...
A flexible polarization-insensitive metamaterial absorber design with a wide field of view was proposed for mid-infrared applications. Both single-band and dual-band designs based on bilayer metallo-dielectric stacks were presented. According to the simulated results, the proposed metamaterial absorbers optimized using a GA (genetic algorithm) could provide absorptivity greater than 0.94 at the target...
A fully monolithic 2 times 2(2 times 5 GHz-band, 2 times 2.4 GHz-band) power amplifier (PA) implemented in a 0.18 mum Silicon Germanium (SiGe) HBT process has been developed for a dual band MIMO 802.11n WLAN system. In order to achieve the required performance for the 5 GHz band while maintaining a high level of integration, different approaches have been investigated. A special Through-Wafer-Via...
A fully monolithic 2times2 (2 a-band, 2 g-band) power amplifier based upon SiGe HBT process is developed for the dual band MIMO 802.11n WLAN system. In order to achieve desirable performances for the 5 GHz band and high integration level, a special through-wafer-via (TWV) process on Si wafer was developed and utilized. In this work, both a-band and g-band PAs show above 17 dBm linear power output...
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