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Defects play a crucial role in room temperature ferromagnetism of dilute magnetic semiconductors. Using valence electron energy-loss spectroscopy (EELS), it was found that the band gap of Co-doped ZnO was smaller than undoped ZnO and some midgap states appeared. Using core-loss EELS, the fine structures of the O K-edge exhibit material-specific defect features in the oxygen spectra. The EELS measurements...
Two-dimensional location control of large Si grains by, so-called, μ-Czochralski process with excimer-laser crystallization enables formation of thin-film transistors inside a grain; single-grain Si TFTs. In this study, the effect was studied of remaining defects inside the location-controlled grains on the electrical performance of single-grain Si TFTs. From electron backscattering diffraction analysis,...
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